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Components

用語解説

用語Terms 記号Symbols 定義Definitions
せん頭逆電圧Repetitive Peak Reverse Voltage VRM 素子の逆方向に繰り返し印加出来る逆電圧の最大値The maximum allowable value of reverse voltage that can be repeatedly applied to the reverse direction of the device.
非繰り返し逆耐電圧Non-Repetitive Peak Reverse Voltage VRSM 素子の逆方向に印加できる逆電圧の最大許容サージ値The maximum allowable surge value of reverse voltage that can be applied to the reverse direction of the device.
試験逆電圧Test Reverse Voltage Vtest 素子の逆方向に試験の為に印加出来る逆電圧の値(1分以内)The value of reverse voltage that can be applied to the reverse direction of the device for the test within 1 minute).
平均整流電流Average Rectified Forward Current I 素子の順方向に流し得る50Hz正弦半波電流の平均値The average value of current at 50Hz,half sine wave(condition angle 180°) that can flow in the forward direction of the device.
せん頭順サージ電流Peak Surge Forward Current IFSM 素子の順方向に流し得る50Hz正弦半波電流の波高値(非繰り返し)Maximum peak value of current at 50Hz,half sine wave(single-face) that can flow in the forward direction of the device (Non-Repetitive).
せん頭サージ電流(ピークインパルス電流)Maximum Surge Current (Peak impulse current) ISM
(IPPM、IPP)
規定されたインパルス波形で、流し得る最大ピーク電流値Maximum peak value of current under specified impulse waveform condition that can flow in the device.
せん頭サージ電力Peak Surge Power Dissipation PSM 規定されたインパルス波形で印加し得る最大ピーク電力値Maximum peak value of power under specified impulse waveform condition that can be applied to the device.
降伏電圧Break Down Voltage VB 素子の逆方向に規定の電流(IB)を流した時の逆電圧(ブレークダウン電圧)The reverse voltage (breakdown voltage) value when a specified current(IB) flows in the reverse direction of the device.
順電圧Forward Voltage Drop VF 素子の順方向に規定の電流を流した時の順方向電圧降下の値The forward voltage drop value when a specified current flows in the forward direction of the device.
クランピング電圧Clamping Voltage Vc 規定された電流ピーク値のインパルス電流を印加した時の端子間の電圧値The voltage value between terminals when a impulse current of specified peak current flows in the device.
逆電流Reverse Current IR 素子に規定の逆電圧を印加した時に逆方向に流れる電流値The reverse leakage current value when a specified voltage is applied in the reverse direction of the device.
許容損失Power Dissipation P 規定された条件のもとでの最大許容電力値Maximum allowable value of power under specified conditions.
ツェナー電圧Zener Voltage V 逆方向に指定された電流IZを流したときの電圧値The voltage value when a specified current IZ flows in the reverse direction of the device.
ツェナー電流Zener Current IZ ツェナー電圧を測定する基準電流Standard current which measures zener voltage.
動作抵抗(ツェナーダイオード)Zener Impedance rd ツェナー電流値の微少変化に対するツェナー電圧の微少変化の割合The ratio of change in a zener voltage to corresponding change in a specified current IZ in the zener area.
温度係数(ツェナーダイオード)Temperature Coefficient of Zener Voltage γ 素子の周囲温度の変化に対するツェナー電圧変化の割合The ratio of change in a zener voltage to corresponding change in a ambient temperature.
逆回復時間Reverse Recovery Time trr 素子を順バイアスから逆バイアスに切換えた時、逆電流が最大値の10%まで減少する時間Time for reverse current to decrease to 10% of maximum, when the device is switched from forward bias to reverse bias.
端子間静電容量Terminal Capacitance CT 逆方向に指定された電圧VRと周波数 f を印加した時の端子間容量The capacitance between device terminals when specified voltage VR and frequency f are applied to the reverse direction of the device.
接合容量Junction Capacitance Cj 逆方向に指定された電圧VRと周波数 f を印加した時の接合容量The junction capacitance when specified voltage VR and frequency f are applied to the reverse direction of the device .
接合部温度Operating Junction Temperature Tj 素子が動作中に許容される接合部の温度Allowable junction temperature in which the device is operating.
保存温度Storage Temperature Tstg 素子を保存する時の許容温度Allowable ambient temperature range within which the device can be stored.
ケース温度Case Temperature Tc 素子のケース温度Case temperature of the device.
周囲温度Ambient Temperature Ta 素子が使用される環境の温度Ambient temperature in which the device is used.
油温度Oil Temperature Toil 素子周囲の高圧絶縁油温度High-pressure electrical oil temperature around the device.
熱抵抗Thermal Resistance Rth(j-a) 単位電力を印加した時の、周囲温度を基準とした接合温度の上昇値The rise value of the junction temperature on the basis of the ambient temperature when unit electric power is applied.
Rth(j-c) 単位電力を印加した時の、ケース温度を基準とした接合温度の上昇値The rise value of the junction temperature on the basis of the case temperature when unit electric power is applied.